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| CHA2091 36-40GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2091 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Features Broad band performance 36-40GHz 2.5dB noise figure, 36-40GHz 14dB gain, 0.5dB gain flatness Low DC power consumption, 45mA 20dBm 3rd order intercept point Chip size: 1,67 x 1,03 x 0.1mm Gain ( dB ) 20 18 16 14 12 10 8 6 4 2 0 20 25 30 35 40 45 50 Frequency ( GHz ) 10 9 8 Noise Figure ( dB ) 7 6 5 4 3 2 1 0 On wafer typical measurements. Main Characteristics Tamb = +25 C Symbol NF G G Parameter Noise figure, 36-40GHz Gain Gain flatness 12 Min Typ 2.5 14 0.5 1.0 Max 4.0 Unit dB dB dB ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref. : DSCHA20917150 - 30 May 07 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2091 Electrical Characteristics Tamb = +25 C, Bias Conditions: Vd = +4V Id=45mA Symbol Fop G G NF VSWRin VSWRout IP3 P1dB Id Parameter Operating frequency range Gain (1) Gain flatness (1) Noise figure (1) Input VSWR (1) Ouput VSWR (1) 3rd order intercept point 36-40GHz Low Noise Amplifier Min 36 12 Typ Max 40 Unit Ghz dB 14 0.5 2.5 1.0 3.5 3.0:1 3.0:1 20 12 45 dB dB dBm dBm mA Output power at 1dB gain compression Drain bias current (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports.When the chip is attached with typical 0.15nH input and output bonding wires, the indicated parameters should be improved. Absolute Maximum Ratings (1) Tamb = +25 C Symbol Vd Pin Top Tstg Parameter Drain bias voltage Maximum peak input power overdrive (2) Operating temperature range Storage temperature range Values 4.0 +15 -40 to +85 -55 to +125 Unit V dBm C C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. DSCHA20917150 - 30 May 07. 2/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 36-40GHz Low Noise Amplifier Typical Results Chip Typical Response ( On wafer Sij ) : Tamb = +25 C Bias conditions: Vd = +4V, Id=45mA Freq GHz 10 12 14 16 18 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 S11 dB -6 -7.1 -8.42 -10 -11.5 -13 -13.6 -14.2 -14.8 -16.1 -18.2 -21.8 -30 -26.2 -18.5 -14.5 -12.3 -10.9 -10.5 -10.5 -11.1 -11.3 -11.6 -12 -12.9 -14.7 -15.5 -10.7 -6.09 -3.4 -2.22 -1.59 -1.15 -0.84 -0.85 -0.67 S11 170.2 156.5 145.2 137 132.1 129 127.7 126.6 122.7 116.3 111 108.1 127.3 -140 -136 -146 -159 -173 174.9 165.2 156.1 150.5 144 133 115.4 87.2 25.3 -42.3 -86.6 -119 -143 -160 -175 173.2 163.7 154.7 S12 dB -57.3 -54.1 -50.3 -48.1 -49.6 -47.8 -48.2 -49.1 -50.1 -45.5 -42.9 -42.2 -40.8 -39.6 -36.8 -34.8 -32.5 -31.8 -30.8 -29.8 -29.6 -29.5 -30.1 -29.6 -28.7 -29 -28.1 -27.8 -28.3 -30.4 -32.9 -35.2 -35.3 -43.5 -39.4 -36.9 S12 -141 -157 173.7 158 138.4 120.7 107 114.5 130.8 130.2 121.1 109.7 107 104.3 93 85 68.7 48.3 28.7 7.3 -15.2 -33.9 -55.6 -69.8 -85.8 -120 -144 -176 146.7 111.9 90 62.9 39 -26.6 27.3 31.8 S21 dB -12.4 -9.98 -8.72 -6.92 -5.05 -3.74 -3.31 -2.37 -0.72 0.08 0.86 2.11 3.95 5.61 7.52 8.99 10.58 11.88 12.69 13.36 13.72 13.93 13.99 14.2 14.39 14.65 14.71 14.34 12.98 10.59 7.53 4.31 1.21 -2.06 -5.61 -9.07 S21 11.3 -12.7 -32.7 -51.3 -71.3 -93.7 -101 -107 -117 -130 -138 -146 -156 -169 176 157.9 139.4 117.3 94.8 72.8 50.2 28.2 6.7 -14.5 -37.1 -61.2 -88.7 -121 -154 174.3 147.6 125.2 105.5 88.2 72.6 58.2 CHA2091 S22 dB -5.68 -6.93 -8.54 -9.44 -11.3 -14.2 -15.1 -15.8 -17.5 -23.2 -32.6 -21.7 -16.2 -12.9 -11 -9.98 -8.78 -7.48 -6.88 -6.94 -7.25 -7.94 -8.73 -9.57 -10.2 -9.88 -9.19 -8.66 -8.99 -10.5 -12.2 -13 -12.5 -11.8 -10.8 -10.1 S22 177.7 152.9 131.2 113 93 81.8 80.4 75.6 61.4 51.5 132.7 167.7 165.6 151.8 140.8 128.3 121.3 109.9 95.3 82.8 70.8 60.9 52.2 47.1 43.7 40.4 30.1 10.8 -16.9 -50 -83.8 -119 -149 -174 169 156.4 Ref. : DSCHA20917150 - 30 May 07 3/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2091 Typical Results Chip Typical Response ( On wafer Sij ) : Tamb = +25 C Vd = +4V Id=45mA 20 15 36-40GHz Low Noise Amplifier Gain, RLoss ( dB ) 10 5 0 -5 -10 -15 -20 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 DBS11 DBS22 Gain Frequency ( GHz ) Typical Gain and Matching measurements on wafer 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 30 31 32 33 34 35 36 37 Gain, NF ( dB ) Gain NF 38 39 40 41 42 43 44 45 Frequency ( GHz ) Typical Gain and Noise Figure measurements on wafer Ref. DSCHA20917150 - 30 May 07. 4/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 36-40GHz Low Noise Amplifier Typical Results Tamb = +25 C Vd = +4V ; Id = 45mA CHA2091 Freq = 37GHz 16 14 16 14 12 Output Power ( dBm ) 12 10 8 6 4 2 0 -12 -10 -8 -6 -4 -2 0 2 4 6 8 6 4 2 0 Input Power ( dBm ) Freq = 39.5GHz 16 14 16 14 12 Output Power ( dBm ) 12 10 8 6 4 2 0 -14 -12 -10 -8 -6 -4 -2 0 2 4 8 6 4 2 0 Input Power ( dBm ) Typical Output Power and Gain measurements in test jig (included losses of the jig) Ref. : DSCHA20917150 - 30 May 07 5/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Gain ( dB ) 10 Gain ( dB ) 10 CHA2091 Typical Chip Assembly 36-40GHz Low Noise Amplifier - Nominal Input and Output bonding :0.3nH for one 25um bond wire. - Chip backside is DC and RF bonding grounded Mechanical data Pad size : 80/80um, chip thickness 100um Ref. DSCHA20917150 - 30 May 07. 6/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 36-40GHz Low Noise Amplifier Chip Biasing CHA2091 This chip is a two stage amplifier, and flexibility is provided by the access to number of pads. The internal DC electrical schematic is given in order to use these pads in a safe way. Vd 50 IN Vds1 Vg 1 The two requirements are : N : Not exceed Vds = 3.5Volt 1 ( internal Drain to Source voltage ). N : Not biased in such a way that Vgs becomes pos itive. 2 ( internal Gate to Source voltage ) We propose two standard biasing : Low Noise and low consumption : Vd = 3.5V and Id = 30mA. 25 OUT Vds2 Vg 2 Low Noise and high output power : Vd = 4.0V and Id = 45mA.( A separate acces to the gate voltages of the first and the output stage is provided. Nominal bias is obtained for a typical current of 30mA for the output stage and 15 mA for the first stage. The first step to bias the amplifier is to tune the Vg1 =-1V and Vg2 to drive 30mA for the full amplifier. Then Vg1 is reduced to obtain 45 mA of current through the amplifier. Ref. : DSCHA20919340 -10-May-2007 7/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2091 36-40GHz Low Noise Amplifier Ordering Information Chip form : CHA2091-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. DSCHA20917150 - 30 May 07. 8/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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